DocumentCode
2151143
Title
Optical gain and recombination currents in a GaAsSb / InGaAs type-II "W" laser structure
Author
Thomson, J.D. ; Smowton, P.M. ; Blood, P. ; Klem, J.F.
Author_Institution
Cardiff Univ., Cardiff
fYear
2007
fDate
17-22 June 2007
Firstpage
1
Lastpage
1
Abstract
Experimental results of the modal gain and recombination currents of a GaAsSb/InGaAs type-II quantum well laser structure emitting at 1.3 mum as a function of current injection and temperature are presented. The radiative efficiency versus injection level at different temperatures is analyzed.
Keywords
III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; GaAsSb-InGaAs; current injection; injection level; modal gain; optical gain; radiative efficiency; recombination currents; type-II W laser structure; type-II quantum well laser structure; wavelength 1.3 mum; Astronomy; Blood; Buildings; Diode lasers; Indium gallium arsenide; Laboratories; Photonic band gap; Radiative recombination; Stimulated emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-0931-0
Electronic_ISBN
978-1-4244-0931-0
Type
conf
DOI
10.1109/CLEOE-IQEC.2007.4386003
Filename
4386003
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