Title :
Current status of epitaxial 1.31-1.55 μm VCSELs on InP
Author :
Reddy, MHM ; Buell, D.A. ; Huntington, A.S. ; Koda, R. ; Freezell, D. ; Asano, T. ; Jim, J.K. ; Hall, E. ; Nakagawa, S. ; Coldren, L.A.
Author_Institution :
California Univ., Santa Barbara, CA, USA
Abstract :
We have reviewed the recent research carried out to realize all-epitaxial VCSELs at long wavelengths. Shortcomings of the InP materials system were overcome by the use of AsSb-based alloys for DBRs and multiple active regions to combat low gain materials. The inclusion of InP spreading layers was seen to greatly improve the thermal properties of the devices. Two apertures were developed for the optical and current confinement. Careful placement of these apertures is expected to improve the VCSEL performance considerably.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; indium compounds; infrared sources; laser transitions; optical transmitters; semiconductor lasers; surface emitting lasers; thermo-optical effects; vapour phase epitaxial growth; 1.31 to 1.55 micron; AsSb-based alloys; DBRs; InP; InP materials system; InP spreading layers; VCSEL performance; VCSELs; all-epitaxial VCSELs; apertures; current confinement; long wavelengths; low gain materials; multiple active regions; optical confinement; thermal properties; Apertures; Bandwidth; Distributed Bragg reflectors; Indium phosphide; Lattices; Mirrors; Optical modulation; Temperature; Thermal conductivity; Vertical cavity surface emitting lasers;
Conference_Titel :
All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and
Print_ISBN :
0-7803-7378-2
DOI :
10.1109/LEOSST.2002.1027623
