Optical effect of the characteristics of buried gat e MESFET

Author

Jaya, T ; Kannan, V

Author_Institution

Eleclronics and Communicalion Engg; Salhyabama Universily, Chennai, India

Volume

1

fYear

2010

fDate

26-28 Feb. 2010

Firstpage

663

Lastpage

667

Abstract

DC characteristics of buried-gate GaAs MESFETs are studied by solvifg dc coftifuity equatiof. This afalysis ifcludifg surface states afd the iof implafted buri ed-gate process. It is showf that the curreft- voltage coul d be rather ifcreased whef iftroducifg af optical light to the buried-gate GaAs MESFETs structure. The photo -voltage characteristics afd the chaffel cofductafce of the device have beef evaluated. The results ifdicate very good performafce of the d evice compared to other devices like MESFET ufder back illumifatiof afd MESFET with froft illumifatiof hav ifg surface gate. Buried-gate optical field effect traf sistor (OPFET) will be highly suitable for optical commuficatiof a fd optical computifg.

Keywords

Absorption; FETs; Gallium arsenide; Lighting; MESFETs; Ohmic contacts; Optical fiber communication; Particle beam optics; Substrates; Voltage; Depletion-mode MESFET (D-MESFET); Enhancement-mode (EMESFET); Metal Field Effect Transistor (MESFET); optical field effect transistor (OPFET);

fLanguage

English

Publisher

ieee

Conference_Titel

Computer and Automation Engineering (ICCAE), 2010 The 2nd International Conference on

Conference_Location

Singapore

Print_ISBN

978-1-4244-5585-0

Electronic_ISBN

978-1-4244-5586-7

Type

conf

DOI

10.1109/ICCAE.2010.5451306

Filename

5451306