Title :
Low noise and high gain RF MOSFETs on plastic substrates
Author :
Kao, H.L. ; Chin, Alvin ; Huang, C.C. ; Hung, B.F. ; Chiang, K.C. ; McAlister, S.P. ; Chi, C.C.
Author_Institution :
Nano Sci. Tech. Center, Nat´l Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
A low minimum noise figure (NFmin) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 μm RF MOSFETs on plastic, made by substrate thinning (∼30 μm), transfer and bonding. The performance can be further improved to 0.96 dB NFmin and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.
Keywords :
MOSFET; Q-factor; inductors; integrated circuit noise; microwave integrated circuits; plastics; silicon; 0.18 micron; 0.96 dB; 1.2 dB; 10 GHz; 12.8 dB; 14.1 dB; Q-factor; RF MOSFET; RF noise; associated gain; inductor; low minimum noise figure; plastic substrates; tensile strain; Bonding; Gain measurement; Inductors; MOSFETs; Noise figure; Noise measurement; Performance gain; Plastics; Radio frequency; Tensile strain;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516584
