DocumentCode
2151249
Title
Low threshold (GaIn)(NAs) semiconductor disk laser emitting at 1260nm
Author
Diehl, Wolfgang ; Kunert, Bernardette ; Reinhard, Stefan ; Brick, Peter ; Stolz, Wolfgang
Author_Institution
OSRAM Opto Semicond., Regensburg
fYear
2007
fDate
17-22 June 2007
Firstpage
1
Lastpage
1
Abstract
We demonstrate a 1260 nm GalnNAs semiconductor disk laser grown by MOVPE showing threshold densities as low as l.lkW/cm2 and slope efficiencies of almost 13% at room temperature while pumping at 808 nm.
Keywords
III-V semiconductors; gallium compounds; indium compounds; optical pumping; semiconductor lasers; GaInNAs; MOVPE; pumping; room temperature; semiconductor disk laser; slope efficiencies; threshold densities; wavelength 1260 nm; wavelength 808 nm; Epitaxial growth; Epitaxial layers; Heat pumps; Laser excitation; Laser modes; Optical pulses; Pump lasers; Semiconductor lasers; Surface emitting lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-0931-0
Electronic_ISBN
978-1-4244-0931-0
Type
conf
DOI
10.1109/CLEOE-IQEC.2007.4386005
Filename
4386005
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