• DocumentCode
    2151723
  • Title

    CMOS cross-coupled VCO architecture comparison at 2GHz and 16GHz

  • Author

    Cross, Matthew ; Young, Darrin J.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    1601
  • Lastpage
    1604
  • Abstract
    This paper presents a comparison study between double-switch (DS) and single-switch (SS) cross-coupled CMOS VCO architectures at 2 GHz and 16 GHz. The oscillators are designed with optimal differential tank oscillation amplitude, which is equal to the threshold voltage of the cross-coupled transistors. Measurement data from prototype oscillators show that the DS architecture can achieve a better performance than the SS architecture at low oscillation frequencies. However, as frequency increases the single-switch architecture outperforms the double-switch counterpart. By employing the single-switch cross-coupled architecture with an optimal oscillation amplitude, a high performance 23.5 GHz VCO is designed and demonstrated with an FOM of 184 dB, which is the best compared to any reported Si-based VCO in the 20 GHz - 30 GHz frequency range.
  • Keywords
    CMOS integrated circuits; UHF oscillators; microwave oscillators; voltage-controlled oscillators; CMOS cross-coupled VCO architecture; FOM; cross-coupled transistors; double-switch architecture; frequency 16 GHz; frequency 2 GHz; frequency 23.5 GHz; noise figure 184 dB; optimal differential tank oscillation amplitude; oscillators; prototype oscillators; single-switch architecture; threshold voltage; Frequency; Inductors; MOSFETs; Parasitic capacitance; Phase noise; Prototypes; Q factor; Threshold voltage; Varactors; Voltage-controlled oscillators; low phase noise; low power; optimal VCO design; oscillator architecture; voltage-controlled oscillator (VCO);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734883
  • Filename
    4734883