GaInNAs/GaAs Quantum-Well Semiconductor Optical Amplifiers for Simultaneous Multi-wavelength Amplification

Author

Pozo, J. ; Vogiatzis, N. ; Lu, J.W. ; Ansell, O. ; Rorison, J.M. ; Heard, P.J. ; Tuomisto, P. ; Konttinen, J. ; Saarinen, M. ; Peng, C. ; Viheriälä, J. ; Leinonen, T. ; Pessa, M.

Author_Institution

Bristol Univ., Bristol

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

The constraints on dilute-nitride Semiconductor Optical Amplifiers (SOAs) for multi-channel amplification have been evaluated. The SOA has been fabricated angling the facets of a GalnNAs/GaAs edge emitting laser using gas enhanced focused ion beam etching.

Keywords

III-V semiconductors; focused ion beam technology; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; quantum well lasers; semiconductor optical amplifiers; sputter etching; GaInNAs-GaAs; SOA; dilute-nitride semiconductor optical amplifiers; edge emitting laser; focused ion beam etching; multichannel amplification; quantum-well semiconductor optical amplifiers; Etching; Gallium arsenide; Gas lasers; Ion beams; Laser modes; Optical device fabrication; Quantum well lasers; Quantum wells; Semiconductor optical amplifiers; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4386027

Filename

4386027