Title :
GaInNAs/GaAs Quantum-Well Semiconductor Optical Amplifiers for Simultaneous Multi-wavelength Amplification
Author :
Pozo, J. ; Vogiatzis, N. ; Lu, J.W. ; Ansell, O. ; Rorison, J.M. ; Heard, P.J. ; Tuomisto, P. ; Konttinen, J. ; Saarinen, M. ; Peng, C. ; Viheriälä, J. ; Leinonen, T. ; Pessa, M.
Author_Institution :
Bristol Univ., Bristol
Abstract :
The constraints on dilute-nitride Semiconductor Optical Amplifiers (SOAs) for multi-channel amplification have been evaluated. The SOA has been fabricated angling the facets of a GalnNAs/GaAs edge emitting laser using gas enhanced focused ion beam etching.
Keywords :
III-V semiconductors; focused ion beam technology; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; quantum well lasers; semiconductor optical amplifiers; sputter etching; GaInNAs-GaAs; SOA; dilute-nitride semiconductor optical amplifiers; edge emitting laser; focused ion beam etching; multichannel amplification; quantum-well semiconductor optical amplifiers; Etching; Gallium arsenide; Gas lasers; Ion beams; Laser modes; Optical device fabrication; Quantum well lasers; Quantum wells; Semiconductor optical amplifiers; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386027
