Title :
Coherence Properties of High-Beta Semiconductor Micropillar Lasers
Author :
Ates, S. ; Ulrich, S.M. ; Reitzenstein, S. ; Löffler, A. ; Forchel, A. ; Michler, P.
Author_Institution :
Univ. Stuttgart, Stuttgart
Abstract :
Coherence properties of high-beta micropillar lasers have been investigated by microphotoluminescence, first- and second-order correlation measurements. (In,Ga)As/GaAs quantum dots (QDs) were used as a gain materials. A smooth transition from spontaneous into stimulated emission is traced from mu-PL measurements, accompanied by a strong increase of the coherence time of the lasing mode.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; micro-optics; photoluminescence; quantum dot lasers; spontaneous emission; stimulated emission; InGaAs-GaAs; coherence time; first-order correlation measurements; gain materials; high-beta semiconductor micropillar lasers; lasing mode; microphotoluminescence; quantum dots; second-order correlation measurements; spontaneous emission; stimulated emission; Gain measurement; Gallium arsenide; Laser modes; Laser transitions; Optical materials; Quantum dot lasers; Semiconductor lasers; Semiconductor materials; Stimulated emission; Time measurement;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386028
