Coherence Properties of High-Beta Semiconductor Micropillar Lasers

Author

Ates, S. ; Ulrich, S.M. ; Reitzenstein, S. ; Löffler, A. ; Forchel, A. ; Michler, P.

Author_Institution

Univ. Stuttgart, Stuttgart

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

Coherence properties of high-beta micropillar lasers have been investigated by microphotoluminescence, first- and second-order correlation measurements. (In,Ga)As/GaAs quantum dots (QDs) were used as a gain materials. A smooth transition from spontaneous into stimulated emission is traced from mu-PL measurements, accompanied by a strong increase of the coherence time of the lasing mode.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser modes; micro-optics; photoluminescence; quantum dot lasers; spontaneous emission; stimulated emission; InGaAs-GaAs; coherence time; first-order correlation measurements; gain materials; high-beta semiconductor micropillar lasers; lasing mode; microphotoluminescence; quantum dots; second-order correlation measurements; spontaneous emission; stimulated emission; Gain measurement; Gallium arsenide; Laser modes; Laser transitions; Optical materials; Quantum dot lasers; Semiconductor lasers; Semiconductor materials; Stimulated emission; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4386028

Filename

4386028