Design of bandgap reference and current reference generator with low supply voltage

Author

Han, Dong-Ok ; Kim, Jeong-Hoon ; Kim, Nam-Heung

Author_Institution

WS Lab., Central R&D Inst. of Samsung Electro Mech., Suwon, South Korea

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1733

Lastpage

1736

Abstract

A design of a CMOS bandgap voltage reference and reference current generator is described and the measurement results are presented in wide temperature range. Using by the resistive subdivision method, the reference circuit is operated with low supply. The measured reference voltage is 630 mV and temperature coefficient of bandgap reference is 29 ppm/Â°C from -10Â°C to 100Â°C with 1.2 V supply voltage. The reference current of generator which uses the reference voltage is 50.2 uA in that temperature range.

Keywords

CMOS integrated circuits; reference circuits; CMOS bandgap voltage reference; bandgap reference circuit; current 50.2 muA; current reference generator; resistive subdivision; temperature -10 degC to 100 degC; voltage 1.2 V; voltage 630 mV; Bipolar transistors; Circuit topology; Low voltage; MOSFETs; Mirrors; Operational amplifiers; Photonic band gap; Research and development; Resistors; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734888

Filename

4734888