Title :
Technology and physics of polysilicon emitters
Author :
Schaber, Hans ; Meister, Thomas F.
Author_Institution :
Siemens AG, Muenchen, West Germany
Abstract :
Basic models proposed to explain the polysilicon emitter effect are reviewed, and the present status of polysilicon emitter modeling is summarized. The present state of the technology is described, and its advantages are discussed. Optimization of forward transit time and speed limitations of polysilicon emitter devices are examined
Keywords :
bipolar integrated circuits; bipolar transistors; elemental semiconductors; semiconductor device models; silicon; emitter modeling; forward transit time optimisation; models; polycrystalline Si; polysilicon emitters; speed limitations; Charge carrier processes; Doping; Frequency; Iron; Photonic band gap; Physics; Production; Reproducibility of results; Silicon; Tunneling;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69463
