Title :
The Effects of Si-Micromachined On-Wafer Packaging on the Performance of K-Band Circuits
Author :
Henderson, Rashaunda M. ; Schwarz, Thomas A. ; Robertson, Stephen V. ; Katehi, Linda P B ; Case, Michael ; Matloubian, Mehran
Author_Institution :
Electrical Engineering and Computer Science Department, The University of Michigan, Room 3240, 1301 Beal Avenue, Ann Arbor, MI 48109-2122, USA. Phone (734) 647-1796 Fax (734) 647-2106
Abstract :
This paper presents results from a study on the effect of Si-micromachined packaging on the performance of K-band circuits. Components inclduding interconnects and stubs have been fabricated using finite ground coplanar (FGC) transmission lines and results indicate that nonmetalized air cavities introduce fewer parasitics as compared to metalized air cavities. Flip-chip devices have been incorporated to design a packaged 3-stage low noise amplifier (LNA). The performance of flip-chip Indium Phosphide (InP) high electron mobility trnsistors (HEMTs) in the host substrate environment is measured and used to design the packaged LNA for desired performance.
Keywords :
Circuit noise; Coplanar transmission lines; Distributed parameter circuits; Electron mobility; Indium phosphide; Integrated circuit interconnections; K-band; Low-noise amplifiers; Packaging; Working environment noise;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338476
