The Effects of Si-Micromachined On-Wafer Packaging on the Performance of K-Band Circuits

Author

Henderson, Rashaunda M. ; Schwarz, Thomas A. ; Robertson, Stephen V. ; Katehi, Linda P B ; Case, Michael ; Matloubian, Mehran

Author_Institution

Electrical Engineering and Computer Science Department, The University of Michigan, Room 3240, 1301 Beal Avenue, Ann Arbor, MI 48109-2122, USA. Phone (734) 647-1796 Fax (734) 647-2106

Volume

3

fYear

1999

fDate

Oct. 1999

Firstpage

398

Lastpage

401

Abstract

This paper presents results from a study on the effect of Si-micromachined packaging on the performance of K-band circuits. Components inclduding interconnects and stubs have been fabricated using finite ground coplanar (FGC) transmission lines and results indicate that nonmetalized air cavities introduce fewer parasitics as compared to metalized air cavities. Flip-chip devices have been incorporated to design a packaged 3-stage low noise amplifier (LNA). The performance of flip-chip Indium Phosphide (InP) high electron mobility trnsistors (HEMTs) in the host substrate environment is measured and used to design the packaged LNA for desired performance.

Keywords

Circuit noise; Coplanar transmission lines; Distributed parameter circuits; Electron mobility; Indium phosphide; Integrated circuit interconnections; K-band; Low-noise amplifiers; Packaging; Working environment noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999. 29th European

Conference_Location

Munich, Germany

Type

conf

DOI

10.1109/EUMA.1999.338476

Filename

4139636