• DocumentCode
    2152079
  • Title

    A low-noise low-offset CMOS readout circuit for MEMS capacitive accelerometers

  • Author

    Chen, Jianghua ; Xiaoxin Cui ; Xuewen Ni ; Bangxian Mo

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    1773
  • Lastpage
    1776
  • Abstract
    This paper describes a low-noise low-offset CMOS readout circuit for MEMS capacitive accelerometers. It employs a feedback capacitance and a combination of switches to have the input parasitic capacitance and the offset voltage canceled. The raised current IDS of the input differential pair in the first stage is used to help reduce sharply the total low-frequency noises without increasing the complexity of the proposed circuit. The simulation result of the proposed circuit shows that an average 60% noise reduction at low frequencies has been achieved when the current in the current source of the first stage is raised six times the original. The root mean square equivalent input noise voltage is about 6.1nV/rtHz@1kHz. The experimental result shows that the capacitance resolution of the whole readout circuit is 10aF/rtHz@1kHz.
  • Keywords
    CMOS integrated circuits; accelerometers; capacitance; circuit complexity; micromechanical devices; noise abatement; MEMS capacitive accelerometers; capacitance; feedback capacitance; frequency 1 kHz; low-noise low-offset CMOS readout circuit; microelectromechanical systems; noise reduction; parasitic capacitance; root mean square; Accelerometers; Circuit simulation; Feedback; Frequency; Low-frequency noise; Micromechanical devices; Noise reduction; Parasitic capacitance; Switches; Voltage; CMOS; analog integrated circuits; low-noise; low-offset; microelectromechanical systems (MEMS); readout circuit; root mean square (rms);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734899
  • Filename
    4734899