DocumentCode :
2152104
Title :
New curvature-coefficient-canceled technique for high-precision CMOS bandgap references
Author :
Li, Linzhen ; Yu, Qi ; Li, Jingchun ; Lian, Li
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
1777
Lastpage :
1780
Abstract :
A new technique of curvature-coefficient-canceled for CMOS bandgap voltage reference is presented, which takes advantage of the self-controlled theory to obtain the VREF and the logarithmic voltage used to cancel the nonlinear term of VBE simultaneously. This technique is implemented by two structures whose VREF are obtained by resistive subdivision approach and mixed mode topology respectively, which are designed in standard CMOS technology with V{iTN}=0.4 V and VTP=-0.5 V. Simulation results indicate that the reference voltages are 783 mV and 777 mV, the temperature coefficients (TC) are 2.1 ppm/°C and 3.3 ppm/°C, respectively. The power supply rejection (PSR) of both circuits are less than -30 dB below 10 kHz. These circuits dissipate about 50 uW and 60 uW at 25°C with a 1 V supply, respectively. Multiple arbitrary sub-references can be obtained due to the use of voltage regulator in the circuits.
Keywords :
CMOS integrated circuits; voltage regulators; curvature-coefficient-canceled technique; high-precision CMOS bandgap references; logarithmic voltage; mixed mode topology; power 50 muW; power 60 muW; power supply rejection; self-controlled theory; temperature 25 degC; temperature coefficients; voltage -0.5 V; voltage 0.4 V; voltage 777 mV; voltage 783 mV; voltage regulator; Bipolar transistors; CMOS technology; Circuit simulation; Circuit topology; Laboratories; Low voltage; Operational amplifiers; Photonic band gap; Temperature dependence; Thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734900
Filename :
4734900
Link To Document :
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