DocumentCode
2152314
Title
Microwave Absorptive MEMS Switches
Author
Tan, Guan-Leng ; Rebeiz, Gabriel M.
Author_Institution
The Radiation Laboratory, EECS Department, The University of Michigan, 1301 Beal Ave., Ann Arbor, MI 48109-2122, USA. Phone: +1-734-936-0183 Fax: +1-734-647-2106, gtan@umich.edu
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
4
Abstract
This paper describes the design and performance of a 30 GHz CPW SPST absorptive MEMS switch based on silicon surface micromachining technology. The MEMS switch is implemented using capacitive shunt bridges with fixed-fixed beams. A return loss of better than 15 dB and an insertion loss of 0.8-1.0 dB is achieved in the up-state position. The return loss is better than 20 dB and the isolation is 25-30 dB at 30 GHz in the down-state position. Potential application areas include switch matrix communication systems.
Keywords
Bridge circuits; Communication switching; Conductors; Coplanar waveguides; Insertion loss; Micromechanical devices; Microswitches; Power semiconductor switches; Resistors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338616
Filename
4139661
Link To Document