DocumentCode

2152530

Title

High-power GaN devices

Author

Platzker, A. ; Heaton, J.

fYear

2005

fDate

12-17 June 2005

Firstpage

481

Lastpage

482

Keywords

Gallium nitride; HEMTs; MODFETs; Passivation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516634

Filename

1516634