DocumentCode :
2152530
Title :
High-power GaN devices
Author :
Platzker, A. ; Heaton, J.
fYear :
2005
fDate :
12-17 June 2005
Firstpage :
481
Lastpage :
482
Keywords :
Gallium nitride; HEMTs; MODFETs; Passivation; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN :
01490-645X
Print_ISBN :
0-7803-8845-3
Type :
conf
DOI :
10.1109/MWSYM.2005.1516634
Filename :
1516634
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2152530
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