On the universality of inversion-layer mobility in n- and p-channel MOSFETs

Author

Takagi, S. ; Iwase, M. ; Toriumi, A.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

398

Lastpage

401

Abstract

The authors report studies on the inversion-layer mobility in n- and p-channel MOSFETs with 10/sup 15/ to 10 /sup 18/ cm/sup -3/ substrate impurity concentrations. The validity and limitations of the universal relationship between the inversion-layer mobility and the effective normal field (E/sub eff/) were examined. Differences have been found in E/sub eff/ dependence between electron and hole mobility. A marked deviation from the universal curve due to substrate impurity scattering has been observed at low carrier concentration. The results suggest that by adding a term for the surface roughness scattering and the deviation due to Coulomb scattering to the universal curves, a more accurate description of inversion-layer mobilities can be realized over a wide range of substrate impurity concentration. The mobility degradation caused by carrier injection also has been studied.<>

Keywords

carrier mobility; insulated gate field effect transistors; inversion layers; semiconductor device testing; Coulomb scattering; carrier injection; effective normal field; hole mobility; inversion-layer mobility; mobility degradation; n-channel MOSFET; p-channel MOSFETs; substrate impurity concentrations; substrate impurity scattering; surface roughness scattering; universal curve; Annealing; Capacitance measurement; Charge carrier processes; Degradation; Electron mobility; Frequency measurement; Impurities; MOSFETs; Q measurement; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32840

Filename

32840