Title :
Atomic layer epitaxy of ZnO for substrates for GaN epitaxy
Author :
Godlewski, M. ; Szczerbakow, A. ; Kopalko, K. ; Lusakowska, E. ; Butcher, K.S.A. ; Goldys, E.M. ; Tansley, T.L. ; Barski, A.
Author_Institution :
Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland
Abstract :
ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ([001] and [111]), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.
Keywords :
III-V semiconductors; atomic layer epitaxial growth; calcium compounds; chemical exchanges; elemental semiconductors; gallium arsenide; gallium compounds; oxidation; sapphire; semiconductor epitaxial layers; silicon; sodium compounds; substrates; wide band gap semiconductors; zinc compounds; Al2O3; Al2O3GaN; GaAs; GaN; GaN epitaxy; Na2OCaOSiO2; Si; ZnO; ZnO films; ZnS; ZnS layers; atomic layer epitaxy; buffer layers; double exchange chemical reaction; gas flow version; oxidisation; sapphire substrate; sapphire/GaN substrate; silicon; single exchange reaction; soda lime glass substrate; Atomic layer deposition; Chemical elements; Epitaxial growth; Fluid flow; Gallium arsenide; Gallium nitride; Silicon; Substrates; Zinc compounds; Zinc oxide;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237178
