High temperature operation of AlGaN/GaN HEMT

Author

Adachi, Nobuo ; Tateno, Yasunori ; Mizuno, Shinya ; Kawano, Akihiro ; Nikaido, Junichiro ; Sano, Seigo

Author_Institution

Eudyna Devices Inc., Yamanashi, Japan

fYear

2005

fDate

12-17 June 2005

Abstract

We investigated high temperature operation of AlGaN/GaN HEMTs. At channel temperature of 269 degC, a linear gain of 12.3 dB and a power added efficiency of 53.6% were achieved at 2.14 GHz, less than 50 V operations. These are sufficient performance to practical application. At channel temperature of 368 degC, the linear gain was 10.4 dB and a power added efficiency of 43.9% was achieved. We also investigated the temperature dependence of equivalent circuit values, and found that the temperature dependence of saturated output power and the linear gain is originated from the temperature dependence of electron velocity in the channel.

Keywords

III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; high-temperature electronics; wide band gap semiconductors; 10.4 dB; 12.3 dB; 2.14 GHz; 269 C; 368 C; 43.9 percent; 53.6 percent; AlGaN-GaN; HEMT devices; equivalent circuit parameters; high temperature operation; linear gain; power amplifiers; saturated output power; temperature-dependent electron velocity; Aluminum gallium nitride; Electrical resistance measurement; Gain; Gallium arsenide; Gallium nitride; HEMTs; Silicon; Surface resistance; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516642

Filename

1516642