Title :
A band to band tunneling MOS device (B/sup 2/T-MOSFET) - A kind of ´Si quantum device´
Author :
Takeda, E. ; Matsuoka, H. ; Igura, Y. ; Asai, S.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A band-to-band tunneling MOS device (B/sup 2/T-MOSFET), which consists of both n/sup +/ source (drain) and p/sup +/ drain (source) is proposed and characterized experimentally in detail. The band-to-band tunneling effect, which puts a new scaling constraint on submicron MOS device design, is used as the mechanism for the operation of this device. Such a diffusion-layer-tunneling device provides no short-channel effects such as V/sub th/ (threshold voltage) lowering and conventional hot-carrier effects, resulting in high scalability down to approximately 0.1 mu m. The electron-hole pairs generated by band-to-band tunneling in the gate-drain overlapped region contribute to the drain current, and high channel doping is not needed. However, it was found that this band-to-band tunneling causes hot-carrier-induced-degradation: V/sub th/ decrease and G/sub m/ (extrinsic transconductance) increase due to hole trapping in n-channel MOSFETs.<>
Keywords :
hole traps; hot carriers; insulated gate field effect transistors; semiconductor device testing; tunnelling; B/sup 2/T-MOSFET; Si quantum device; band to band tunneling MOS device; diffusion-layer-tunneling device; drain current; electron-hole pairs; extrinsic transconductance; gate-drain overlapped region; high scalability; hole trapping; hot-carrier-induced-degradation; n-channel MOSFETs; n/sup +/ source; p/sup +/ drain; scaling constraint; threshold voltage; Doping; Impurities; MOS devices; MOSFETs; Scalability; Threshold voltage; Tunneling; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32841
