DocumentCode
2152880
Title
Detecting IMD Sweet Spots in LDMOS Devices through an Accurate Nonlinear Characterization
Author
González, P.J. ; Herran, Luis ; García, J.A. ; Fernandez, T. ; Tazón, A. ; Mediavilla, A. ; García, J.L.
Author_Institution
ACORDE, Santander, Spain. pedroj@dicom.unican.es
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
3
Abstract
The existence of small signal intermodulation distortion (IMD) "sweet spots" in RF Power LDMOS FETs is accurately predicted through a not previously reported complete characterization of the Ids(Vgs,Vds) Taylor-series coefficients. These results have been employed in optimizing the nonlinear distortion behavior of a 1.8 GHz power amplifier.
Keywords
FETs; Intermodulation distortion; Linearity; MOSFETs; Nonlinear distortion; Power amplifiers; RF signals; Radio frequency; Radiofrequency amplifiers; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338655
Filename
4139681
Link To Document