• DocumentCode
    2153213
  • Title

    Microwave Integrated CMOS Oscillators on Silicon-on-Insulator Substrate

  • Author

    Goffioul, M. ; Raskin, J.P. ; Vanhoenacker-Janvier, D.

  • Author_Institution
    Université catholique de Louvain, Microwave Laboratory, Place du Levant, 3, B-1348 Louvain-la-Neuve, Belgium. Tel.: +32 10 47 23 04, Fax: +32 10 47 87 05
  • fYear
    2000
  • fDate
    Oct. 2000
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper shows the feasibility of implementing CMOS microwave oscillators on Silicon-on-Insulator (SOI) substrate at 5.8 and 12 GHz. The oscillators have been designed by introducing in a circuit simulator (SPICE) the SOI MOSFET´s models developed at our laboratory. The models and the fabrication process of 0.25 ¿m channel length Fully Depleted (FD) SOI MOSFET´s were not yet optimized for the first oscillator designs presented in this paper. However, the results show the potentiality of SOI CMOS technology for building low-power, low-voltage RF circuits.
  • Keywords
    Buildings; CMOS technology; Circuit simulation; Design optimization; Fabrication; Laboratories; Microwave oscillators; SPICE; Semiconductor device modeling; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000. 30th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.2000.338682
  • Filename
    4139695
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2153213