Title :
Enhanced light self-action in mesoporous silicon
Author :
Golovan, L.A. ; Zabotnov, S.V. ; Piskunov, N.A. ; Kashkarov, P.K. ; Timoshenko, V.Yu. ; Zheltikov, A.M. ; Yakunin, S. ; Kopylovsky, M. ; Gromov, Yu. ; Gayvoronsky, V. ; Fang, G.Y. ; Li, C.F.
Author_Institution :
M.V. Lomonosov Moscow State Univ., Moscow
Abstract :
This paper aims to study mesoporous silicon with diameter range of 10-100 nm. The mesoporous Si samples, obtained by electrochemical etching, exhibit negative birefringence. Transmission measurements show effective two-photon absorption and self-focusing which depends on the porosity of the samples.
Keywords :
birefringence; electrochemistry; elemental semiconductors; etching; mesoporous materials; optical self-focusing; porosity; silicon; two-photon processes; Si; electrochemical etching; enhanced light self-action; mesoporous silicon; negative birefringence; porosity; self-focusing; size 10 nm to 100 nm; transmission measurements; two-photon absorption; Anisotropic magnetoresistance; Birefringence; Crystalline materials; Crystallization; Mesoporous materials; Nanostructured materials; Nonlinear optics; Optical materials; Semiconductor materials; Silicon;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386086
