Enhanced light self-action in mesoporous silicon

Author

Golovan, L.A. ; Zabotnov, S.V. ; Piskunov, N.A. ; Kashkarov, P.K. ; Timoshenko, V.Yu. ; Zheltikov, A.M. ; Yakunin, S. ; Kopylovsky, M. ; Gromov, Yu. ; Gayvoronsky, V. ; Fang, G.Y. ; Li, C.F.

Author_Institution

M.V. Lomonosov Moscow State Univ., Moscow

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

This paper aims to study mesoporous silicon with diameter range of 10-100 nm. The mesoporous Si samples, obtained by electrochemical etching, exhibit negative birefringence. Transmission measurements show effective two-photon absorption and self-focusing which depends on the porosity of the samples.

Keywords

birefringence; electrochemistry; elemental semiconductors; etching; mesoporous materials; optical self-focusing; porosity; silicon; two-photon processes; Si; electrochemical etching; enhanced light self-action; mesoporous silicon; negative birefringence; porosity; self-focusing; size 10 nm to 100 nm; transmission measurements; two-photon absorption; Anisotropic magnetoresistance; Birefringence; Crystalline materials; Crystallization; Mesoporous materials; Nanostructured materials; Nonlinear optics; Optical materials; Semiconductor materials; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4386086

Filename

4386086