DocumentCode :
2153449
Title :
The optical properties of very thin-layer CdTe/ZnSe
Author :
Van Dao, Lap ; Makino, Hisao ; Takai, Toshiaki ; Lowe, Martin ; Hannaford, Peter ; Yao, Takafumi
Author_Institution :
Centre for Atom Opt. & Ultrafast Spectrosc., Swinburne Univ. of Technol., Melbourne, Vic., Australia
fYear :
2002
fDate :
11-13 Dec. 2002
Firstpage :
145
Lastpage :
148
Abstract :
The optical properties of the very thin layer semiconductor structure CdTe/ZnSe are investigated using temperature dependent photoluminescence and spectrally resolved three-pulse two-colour femtosecond photon echo measurements. The temperature dependence of the photoluminescence, the wavelength dependence of the dephasing of excited carriers, and the homogeneous broadening of the energy levels shown the luminescence of quantum dots in this samples.
Keywords :
II-VI semiconductors; cadmium compounds; high-speed optical techniques; optical films; photon echo; semiconductor quantum dots; wide band gap semiconductors; zinc compounds; CdTe-ZnSe; dephasing; energy levels; excited carriers; homogeneous broadening; optical properties; photoluminescence; quantum dots; spectrally resolved photon echo measurements; thin layer semiconductor structure; three-pulse femtosecond photon echo measurements; two-colour femtosecond photon echo measurements; Atom optics; Biomedical optical imaging; Optical buffering; Optical pumping; Photoluminescence; Pulse modulation; Quantum dots; Temperature dependence; Ultrafast optics; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN :
1097-2137
Print_ISBN :
0-7803-7571-8
Type :
conf
DOI :
10.1109/COMMAD.2002.1237213
Filename :
1237213
Link To Document :
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