Spatial distribution of charges in heat-treated ultrathin polyimide Langmuir-Blodgett films

Author

Iwamoto, Mitsumasa ; Fukuda, Atsushi ; Itoh, Eiji

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

1

fYear

1994

fDate

3-8 Jul 1994

Firstpage

193

Abstract

Organic ultrathin films are widely used as insulators in electronics, where the films are in contact with metal electrodes. It is essential to determine any electronic phenomena occurring at the metal/film interface. Information on the spatial distribution of charges in the films is very important. In this study, the spatial distribution of charges in heat-treated polyimide (PI) Langmuir-Blodgett (LB) films on various metals was determined on nanometer scale by measuring the potential across the films as a function of the number of deposited layers. The depth of penetration of excess charges displaced from metal electrodes into PI LB films was found to be about 3 nm, and an electric field of the order of 10⁶ V/cm is established at the interface owing to the excess charges displaced

Keywords

Charge measurement; Chemicals; Current measurement; Dielectric measurements; Dielectric substrates; Electrodes; Glass; Insulation; Nonhomogeneous media; Polyimides;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 1994., Proceedings of the 4th International Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-1307-0

Type

conf

DOI

10.1109/ICPADM.1994.413971

Filename

413971