DocumentCode
2153596
Title
Metallo-organic decomposition derived Sr0.95Ca0.05ZrO3 oxide thin films on Pt/Ti/SiO2/Si substrate
Author
Chen, Changhong ; Weiguang Zhu ; Yu, Ting ; Chen, Xiaofeng ; Lu, Yuekang ; Krishnan, R. Gopal
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear
2002
fDate
11-13 Dec. 2002
Firstpage
169
Lastpage
172
Abstract
Dielectric thin films of strontium zirconate doped with 5 mol% calcium were prepared on Pt/Ti/SiO2/Si substrate by the metallo-organic decomposition (MOD) wet chemical technology followed by annealing at different temperatures in flowing oxygen atmosphere. Those prepared Sr0.95Ca0.05ZrO3 thin films were investigated using differential thermal analysis (DTA) and thermogravimetric analysis (TGA), X-ray diffraction (XRD), UV optical reflection spectroscopic measurement, and sweeping frequency dependence of the dielectric constants and losses to study their structural development, optical band gaps, and dielectric properties. The study is aimed at seeking a possibility for an application in the area of high-K dielectrics.
Keywords
MOCVD; X-ray diffraction; annealing; calcium compounds; dielectric losses; dielectric thin films; differential thermal analysis; infrared spectra; optical constants; optical films; permittivity; strontium compounds; Pt-Ti-SiO2-Si; Pt/Ti/SiO2/Si substrate; Sr0.95Ca0.05ZrO3; UV optical reflection spectroscopic measurement; X-ray diffraction; annealing; calcium; dielectric constants; dielectric losses; dielectric thin films; differential thermal analysis; flowing oxygen atmosphere; high-K dielectrics; metallo-organic decomposition; optical band gaps; oxide thin films; strontium zirconate; structural development; sweeping frequency dependence; thermogravimetric analysis; wet chemical technology; Annealing; Atmosphere; Calcium; Chemical technology; Dielectric loss measurement; Dielectric substrates; Dielectric thin films; Optical films; Strontium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN
1097-2137
Print_ISBN
0-7803-7571-8
Type
conf
DOI
10.1109/COMMAD.2002.1237219
Filename
1237219
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