Title :
Two Octave Phemt Power Amplifier for EW Applications
Author :
Roussel, L. ; Duperrier, C. ; Campovecchio, M. ; Lajugie, M.
Author_Institution :
THOMSON-CSF MICOELECTRONIQUE, 29 avenue Carnot, 91349 MASSY CEDEX FRANCE
Abstract :
Two 4.5-18 GHz MMIC amplifiers have been designed and fully tested. They have been fabricated using the Power pHemt process available at TriQuint Semiconductor, Texas. The first amplifier is a one stage distributed power amplifier which has been power optimised and exhibits 1W CW output power for a 6 dB associated gain. The second amplifier is a 2W three stage power amplifier with 20 dB gain. They are part of a first run launched in order to evaluate the different wideband structures and to improve linear and non linear models.
Keywords :
Broadband amplifiers; Distributed amplifiers; Electronic warfare; Frequency; Gain; MMICs; PHEMTs; Power amplifiers; Power generation; Wideband;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338698
