DocumentCode
2153713
Title
Backside optical emission diagnostics for excess IDDQ
Author
Kash, J.A. ; Tsang, J.C. ; Rizzolo, Richard F. ; Patel, Atul K. ; Shore, Aaron D.
Author_Institution
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1997
fDate
5-8 May 1997
Firstpage
23
Lastpage
26
Abstract
Backside optical emission was used to diagnose excess quiescent current in a multi-million gate microprocessor. Emission images showed the current was due to FET´s improperly set in a conducting state. The utility of backside optical emission for IC diagnostics is discussed, and requirements for optical detectors and sample preparation are considered
Keywords
computer testing; integrated circuit testing; microprocessor chips; IC; backside optical emission diagnostics; excess quiescent current; microprocessor; optical detector; sample preparation; CMOS logic circuits; Circuit faults; Circuit testing; FETs; Latches; Logic arrays; Microprocessors; Semiconductor device measurement; Stimulated emission; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997
Conference_Location
Santa Clara, CA
Print_ISBN
0-7803-3669-0
Type
conf
DOI
10.1109/CICC.1997.606577
Filename
606577
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