DocumentCode
2153785
Title
Investigation of growth phases of chemical bath deposited CdS thin films
Author
Duncan, P.C. ; Hinckley, S. ; Gluszak, E.A. ; Dytlewski, N.
Author_Institution
Sch. of Eng. & Math., Edith Cowan Univ., Perth, WA, Australia
fYear
2002
fDate
11-13 Dec. 2002
Firstpage
197
Lastpage
200
Abstract
Polycrystalline CdS thin films, ranging in thickness from 30 to 200 nm, have been chemically deposited onto glass substrates using an ammonia-cadmium-thiourea reaction solution. Using proton-induced X-ray emission and atomic force microscopy, these film´s elemental composition, thickness and microstructure have been examined. Analysis indicates that there is a distinct change from the continuous phase deposition to a particulate phase deposition and that these two different phases produce layers of CdS with different densities. Because of this change in density the point where the particulate CdS phase becomes the dominant deposition process can be identified. A mechanism is proposed to explain this difference in film densities.
Keywords
II-VI semiconductors; X-ray emission spectra; atomic force microscopy; cadmium compounds; crystal microstructure; liquid phase deposition; semiconductor growth; semiconductor thin films; 30 to 200 nm; CdS; CdS thin films; ammonia-cadmium-thiourea reaction solution; atomic force microscopy; chemical bath deposition; chemical deposition; continuous phase deposition; film densities; glass substrates; growth phases; microstructure; particulate phase deposition; polycrystalline thin films; proton-induced X-ray emission; Atomic force microscopy; Atomic layer deposition; Cadmium compounds; Chemicals; Glass; Microstructure; Sputtering; Substrates; Surface morphology; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN
1097-2137
Print_ISBN
0-7803-7571-8
Type
conf
DOI
10.1109/COMMAD.2002.1237226
Filename
1237226
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