DocumentCode :
2153786
Title :
A Gate Bias Free Power MMIC Module for Ka-Band High-speed Wireless Applications
Author :
Ichikawa, S. ; Satoh, T. ; Shimura, T. ; Betti-Berutto, A. ; Furukawa, Y. ; Hasegawa, Y. ; Kuroda, S. ; Fukaya, J.
Author_Institution :
Fujitsu Quantum Devices Ltd., Kokubo Kogyo Danchi, Showa, Nakakoma, Yamanashi 409-3883, JAPAN
fYear :
2000
fDate :
Oct. 2000
Firstpage :
1
Lastpage :
4
Abstract :
A high power and high gain packaged power MMIC module for Ka-band applications operating under a single polarity bias supply has been developed for the first time. This PA module consists of two pseudomorphic HEMT MMICs, with Lg=0.25um, packaged in a single power module. These MMICs operate without a gate bias control voltage when the gate bias is shunted in the package. This PA module provides 30dBm output power and approximately 30dB of gain in the 27-31GHz range. The single bias supply operation provides significant cost advantage to the device manufacture as well as the end user since there is no need to design a gate control bias network.
Keywords :
Costs; Driver circuits; MMICs; Manufacturing; Multichip modules; PHEMTs; Power generation; Radio frequency; Semiconductor device packaging; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
Type :
conf
DOI :
10.1109/EUMA.2000.338706
Filename :
4139719
Link To Document :
بازگشت