A 5 volt high density poly-poly erase flash EPROM cell

Author

Kazerounian, R. ; Ali, Shady ; Ma, Y. ; Eitan, B.

Author_Institution

Waferscale Integration, Inc., Fremont, CA, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

436

Lastpage

439

Abstract

A 5-V-only flash EPROM (erasable programmable read-only memory) cell is described which is programmed by channel-hot-electron injection and erased through a poly-poly oxide. The cell consists of a self-aligned split-gate EPROM and a polysilicon erase line. A charge-pumping technique which takes advantage of very low programming current is used to ensure fast programming at a worst case condition of 125 degrees C and 4.5-V supply. An over-erase technique is used to achieve a uniform erase, high read current, and extended endurance. The flash cell is implemented in a staggered virtual ground-array which yields a cell size of 18 mu m with 1.2- mu m design rules in a double-poly CMOS EPROM process.<>

Keywords

CMOS integrated circuits; PROM; VLSI; integrated circuit technology; integrated memory circuits; 1.2 micron; 125 C; 18 micron; 4.5 V; 5 V; 5-V-only; cell size; charge-pumping technique; design rules; double-poly CMOS EPROM process; erasable programmable read-only memory; extended endurance; fast programming; flash EPROM cell; flash cell; high density; high read current; low programming current; over-erase technique; poly-poly erase; poly-poly oxide; polysilicon erase line; programmed by channel-hot-electron injection; self-aligned split-gate EPROM; staggered virtual ground-array; uniform erase; worst case condition; CMOS process; Channel hot electron injection; Charge pumps; Circuits; Costs; EPROM; Nonvolatile memory; Secondary generated hot electron injection; Split gate flash memory cells; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32849

Filename

32849