Title :
A novel tunable broadband power amplifier module operating from 0.8 GHz to 2.0 GHz
Author :
Zhang, Haitao ; Gao, Huai ; Li, Guann-Pyng
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ. at Irvine, CA, USA
Abstract :
In this paper, an InGaP/GaAs HBT broadband power amplifier with a novel tunable output matching circuit is first proposed and implemented. The 3-stage broadband power amplifier is realized by using the compensating matching technique and optimizing the distribution of power gain among stages. The output matching circuit is implemented with parallel L_C tank circuits using PIN diodes to control the inductor value. This broadband amplifier module offers the advantage of fewer components, less power insertion loss, small size and high linearity. The broadband power amplifier module demonstrates 28 dB power gain, 30 dBm output power and higher than 30% power added efficiency (PAE) at frequencies covering dual bands from 0.85 GHz to 0.95 GHz and from 1.71 GHz to 1.95 GHz, which can be used in the GSM, DCS, PCS and CDMA systems.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; optimisation; wideband amplifiers; 0.8 to 2.0 GHz; 0.85 to 0.95 GHz; 1.71 to 1.95 GHz; 28 dB; 30 percent; CDMA systems; DCS; GSM; HBT broadband power amplifier; InGaP-GaAs; MMIC power amplifiers; PCS; PIN diodes; broadband amplifier module; heterojunction bipolar transistors; inductor value; matching technique; parallel LC tank circuits; power bipolar transistor amplifiers; power gain distribution; reconfigurable architectures; semiconductor diode switches; tunable broadband power amplifier module; tunable output matching circuit; Broadband amplifiers; Distributed amplifiers; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Inductors; Insertion loss; Linearity; Power amplifiers; Tunable circuits and devices;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516692
