Title :
The use of selective electroless metal deposition for micron size contact fill
Author :
Wei, C.S. ; Fraser, D.B. ; Wu, A.T. ; Paunovic, M. ; Ting, C.H.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
A novel method of filling micron-size contact holes using the selective electroless metal deposition (SEMD) technique has been developed and demonstrated on advanced device technology. The selective process is based on the electroless deposition of palladium or nickel only in CoSi/sub 2/ or TiSi/sub 2/ based contact holes but not on dielectric films such as BPSG. Excellent planarization of contact holes and good electrical properties such as junction integrity, good transistor characteristics, and good contact resistance have been obtained. To improve the temperature stability of the contact material, selective W is deposited in TiSi/sub 2/-based contacts; good junction integrity and low contact resistance were obtained up to 450 degrees C.<>
Keywords :
VLSI; electroless deposition; integrated circuit technology; metallisation; nickel; palladium; 450 C; Ni selective deposition; Ni-CoSi/sub 2/; Ni-TiSi/sub 2/; Pd selective deposition; Pd-CoSi/sub 2/; Pd-TiSi/sub 2/; SEMD; TiSi/sub 2/ based contact holes; contact material; contact resistance; electrical properties; junction integrity; micron size contact fill; planarization of contact holes; selective electroless metal deposition; temperature stability; transistor characteristics; Contact resistance; Electromigration; Filling; Nickel; Palladium; Planarization; Plugs; Silicides; Surface topography; Tungsten;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32851
