DocumentCode
2153966
Title
Development of highly reliable Al-Si-Pd alloy interconnection for VLSI
Author
Onuki, J. ; Koubuchi, Y. ; Fukada, S. ; Suwa, M. ; Misawa, Y. ; Itagaki, T.
Author_Institution
Hitachi Ltd., Ibaraki, Japan
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
454
Lastpage
457
Abstract
A novel sputter-deposited Al-Si-Pd alloy has been investigated for use for VLSI interconnection in place of Al-Si-Cu-alloy. Workability of the Al-Si-Pd alloy in submicron patterning has proved to be much better than that of Al-Si-Cu alloy, and both electromigration resistance and stress-induced migration resistance are higher than those of Al-Si-Cu alloy. Long-term reliability tests of a resin-molded 1.3- mu m-process MOS device using Al-Si-Pd alloy have given satisfactory results.<>
Keywords
VLSI; aluminium alloys; chemical vapour deposition; life testing; metallisation; palladium alloys; reliability; silicon alloys; 1.3 micron; Al-Si-Pd alloy; MOS device; VLSI interconnection; electromigration resistance; reliability tests; sputter-deposited; stress-induced migration resistance; submicron patterning; Aluminum alloys; Copper alloys; Corrosion; Creep; Dry etching; Electromigration; Grain boundaries; Stress; Very large scale integration; Workability;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32853
Filename
32853
Link To Document