Title :
In-situ carbon-doped aluminum metallization for VLSI/ULSI interconnections
Author :
Kato, T. ; Ito, T. ; Ishikawa, H.
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
Abstract :
Reliable Al metallization has been performed using a plasma CVD (chemical vapor deposition) technique. In-situ doping of carbon onto an Al film suppresses the growth of Al crystal grains, hillocks and spikes. MTFs (median times to failure) of the films due to electromigration are one order of magnitude greater than that of a pure Al film. The resistivity is reduced by a factor of 3 to 4 when carbon-doped Al is cooled from room to liquid-nitrogen temperature. Al films with mirror surface and fine grains are suitable for reliable VLSI/ULSI (ultra large scale integration) metallization.<>
Keywords :
VLSI; aluminium; carbon; chemical vapour deposition; metallisation; reliability; 300 K; 77 K; Al:C metallisation; ULSI; VLSI; chemical vapor deposition; electromigration; fine grains; hillock growth suppression; median times to failure; mirror surface; plasma CVD; reliability; resistivity; ultra large scale integration; Aluminum; Chemical vapor deposition; Conductivity; Doping; Electromigration; Metallization; Plasma chemistry; Plasma temperature; Ultra large scale integration; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32854
