Title :
Layer tungsten and its applications for VLSI interconnects
Author :
Tsai, N.S. ; Rana, V.V.S. ; Huttemann, R.D. ; Wong, Y.M. ; Haynes, R.W. ; Singh, R. ; Manocha, A.S.
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
Abstract :
The authors report a novel method of fabricating chemical-vapor-deposited (CVD) small-grain tungsten films and its application to multilevel metal interconnects. By interrupting the tungsten grain growth using a layer of thin silicon and by consuming the silicon layer during subsequent tungsten deposition, tungsten films with fine grains can be obtained. The fine-grained tungsten shows a significant improvement in film roughness and offer an advantage for plug formation. Grain size and interface silicon thickness effects on film resistivity are characterized. Good device characteristics have been obtained using this layered tungsten for metal wiring or window plug applications.<>
Keywords :
VLSI; chemical vapour deposition; metallisation; silicon; tungsten; CVD; VLSI interconnects; W metallisation; W-Si layered films; chemical vapor deposition; device characteristics; film resistivity; film roughness; multilevel metal interconnects; plug formation; window plug applications; Conductivity; Etching; Grain size; Plugs; Rough surfaces; Semiconductor films; Silicon; Tungsten; Very large scale integration; Wiring;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32855
