Layer tungsten and its applications for VLSI interconnects

Author

Tsai, N.S. ; Rana, V.V.S. ; Huttemann, R.D. ; Wong, Y.M. ; Haynes, R.W. ; Singh, R. ; Manocha, A.S.

Author_Institution

AT&T Bell Lab., Allentown, PA, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

462

Lastpage

465

Abstract

The authors report a novel method of fabricating chemical-vapor-deposited (CVD) small-grain tungsten films and its application to multilevel metal interconnects. By interrupting the tungsten grain growth using a layer of thin silicon and by consuming the silicon layer during subsequent tungsten deposition, tungsten films with fine grains can be obtained. The fine-grained tungsten shows a significant improvement in film roughness and offer an advantage for plug formation. Grain size and interface silicon thickness effects on film resistivity are characterized. Good device characteristics have been obtained using this layered tungsten for metal wiring or window plug applications.<>

Keywords

VLSI; chemical vapour deposition; metallisation; silicon; tungsten; CVD; VLSI interconnects; W metallisation; W-Si layered films; chemical vapor deposition; device characteristics; film resistivity; film roughness; multilevel metal interconnects; plug formation; window plug applications; Conductivity; Etching; Grain size; Plugs; Rough surfaces; Semiconductor films; Silicon; Tungsten; Very large scale integration; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32855

Filename

32855