Atomic layer epitaxy for the growth of heterostructures

Author

Dapkus, P.D. ; DenBaars, S.P.

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

472

Lastpage

474

Abstract

The atomic layer epitaxial (ALE) growth of thin GaAs layers and their inclusion in quantum well devices is described. Uniform, high-quality materials have been grown by a modification of the MOCVD process that allows a single-monolayer control over layer thickness by relying on surface-controlled processes. Laser excitation has been used during ALE growth to deposit ultrathin layers of GaAs layers selectively and to form buried heterostructures. The growth techniques, materials and device properties, and applications to new areas are described.<>

Keywords

III-V semiconductors; atomic layer epitaxial growth; chemical vapour deposition; gallium arsenide; semiconductor growth; ALE; MOCVD process; applications; buried heterostructures; device properties; growth of heterostructures; growth techniques; high-quality materials; quantum well devices; semiconductors; single-monolayer control over layer thickness; surface-controlled processes; ultrathin layers of GaAs; Atomic layer deposition; Doping; Epitaxial growth; Gallium arsenide; Hydrogen; Laser excitation; MOCVD; Optical materials; Quantum well lasers; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32857

Filename

32857