Prototype InAsSb strained-layer superlattice photovoltaic and photoconductive infrared detectors

Author

Kurtz, S.R. ; Dawson, L.R. ; Biefeld, R.M. ; Zipperian, T.E. ; Fritz, I.J.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

479

Lastpage

482

Abstract

Prototype infrared detectors using InAs/sub 1-x/Sb/sub x/ (x>0.8) strained-layer superlattices are described. Photovoltaic detectors have been constructed with long-wavelength responses extending out to 10.4 mu m and detectivities within an order of magnitude of commercial HgCdTe detectors. A photoconductive detector based on a novel four-layer-per-period superlattice displayed gain values as high as 90 due to suppressed recombination in the type II superlattice.<>

Keywords

III-V semiconductors; indium antimonide; indium compounds; infrared detectors; photoconducting devices; photovoltaic cells; semiconductor superlattices; 10.4 micron; InAs/sub 1-x/Sb/sub x/; detectivities; four-layer-per-period superlattice; gain values; long-wavelength responses; photoconductive detector; photoconductive infrared detectors; photovoltaic IR detectors; prototype; semiconductors; strained-layer superlattices; suppressed recombination; type II superlattice; Doping; Electrons; Infrared detectors; Laser sintering; Photoconductivity; Photodiodes; Photovoltaic systems; Prototypes; Solar power generation; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32859

Filename

32859