Optical study on the coupled GaAsSb/GaAs double quantum wells

Author

Jiang, D.S. ; Liang, X.G. ; Chang, Kuo-Pin ; Bian, L.F. ; Sun, B.Q. ; Wang, J.B. ; Johnson, S. ; Zhang, Y.H.

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing, China

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

255

Lastpage

258

Abstract

The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-I QW when the GaAsSb layer thickness is thin enough.

Keywords

III-V semiconductors; band structure; gallium arsenide; interface structure; photoluminescence; semiconductor epitaxial layers; semiconductor quantum wells; GaAsSb layer thickness; GaAsSb-GaAs-GaAsP; GaAsSb/GaAs-based quantum wells; GaAsSb/GaAs/GaAsP coupled double QW structures; QW; coupled GaAsSb/GaAs double quantum wells; energy band structure; epitaxial layers; interface quality; optical properties; optical study; structural properties; Capacitive sensors; Displays; Gallium arsenide; Molecular beam epitaxial growth; Optical coupling; Quantum well lasers; Satellites; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237240

Filename

1237240