Title :
An AlGaSb avalanche photodiode exhibiting low excess noise factor
Author :
Mikawa, T. ; Miura, S. ; Kuwatsuka, H. ; Yasuoka, N. ; Tanahashi, T. ; Wada, O.
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
Abstract :
An AlGaSb avalanche photodiode (APD), having a large ionization rate ratio due to resonant impact ionization, has been fabricated and tested. The excess noise factor and the ionization rates for holes and electrons have been measured. A low excess noise factor of 3.8, which is 1.2 dB lower than that of the conventional GaInAs APD, has been obtained. From this excess noise factor, the effective value of the hole-to-electron ionization rate ratio k/sub eff/ has been determined to be as high as 5, which is in good agreement with the hole-to-electron ionization rate ratio given by multiplication data. This (k/sub eff/) value would be the highest ever reported for long-wavelength III-V APDs. Such a large ionization rate ratio is expected due to resonant impact ionization.<>
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; electron device noise; gallium compounds; impact ionisation; APD; AlGaSb avalanche photodiode; hole-to-electron ionization rate ratio; large ionization rate ratio; long-wavelength; low excess noise factor; multiplication data; resonant impact ionization; semiconductors; Avalanche photodiodes; Dark current; Diodes; Etching; Gold; Ionization; Resonance; Signal to noise ratio; Substrates; Voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32861
