MOS device modeling at liquid-nitrogen temperature

The state of the art in self-consistent numerical low-temperature MOS modeling is reviewed. The physical assumptions which are required to describe carrier transport at liquid nitrogen temperature are discussed. Particular emphasis is put on the models for space charge (impurity freeze-out), carrier mobility (temperature dependence of scattering mechanisms at a semiconductor-insulator interface), and carrier generation-recombination (impact ionization). The differences with regard to the numerical methods required for the solution of low-temperature models as opposed to room-temperature models are explained. Typical results obtained with the simulator MINIMOS 4 are presented.<>