Highly efficient mid-infrared OPO based on low-loss Orientation-Patterned GaAs samples

Author

Faye, D. ; Grisard, A. ; Rard, B. Ge ; Lallier, E. ; Kieleck, K. ; Hirth, A.

Author_Institution

Thales Res. & Technol. France, Palaiseau

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

In this paper, we report on what is, to our knowledge, the highest efficiency (57 %) and average power (1.2 W) obtained with a GaAs OPO in the mid-infrared region (3-5 mum). These results have been demonstrated thanks to the development of a low-optical-losses orientation-patterned GaAs (OP-GaAs) fabrication process. Our orientation-patterned quasiphase matching structures were produced by bonding together two 2" GaAs wafers. Standard photo-lithography and etching processes can then be used to define multi-grating 2-inches wafer.

Keywords

III-V semiconductors; etching; gallium arsenide; optical fabrication; optical losses; optical parametric oscillators; optical phase matching; photolithography; GaAs; etching processes; fabrication process; low-loss orientation-patterned samples; mid-infrared OPO; multigrating wafer; photo-lithography; power 1.2 W; quasiphase matching structures; wavelength 3 mum to 5 mum; Crystals; Epitaxial growth; Etching; Fabrication; Frequency conversion; Gallium arsenide; Laser beams; Laser excitation; Power generation; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4386124

Filename

4386124