Title :
Performance improvement of a thick field oxide ESD protection circuit by halo implant
Author :
Gilbert, Percy V. ; Tsui, Paul G Y ; Sun, Shih-Wei ; Jamison, Stephen ; Miller, James W.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
Optimization of a sub-0.5 μm ESD protection circuit using halo implant is described. A p-type halo implant significantly improves the ESD robustness of a high performance I/O circuit as noted by Human Body Model (HBM) test results. The improved ESD performance is directly attributed to the ability of the halo implanted Thick Field Oxide (TFO) device to inhibit the turn-on of the n-channel output buffer during an ESD event. Improved ESD performance is achieved without the use of additional series resistance and with no increase in device area. The results represent the first time transmission-line pulse generator (TLPG) analysis has been used on a fully synthesized I/O circuit to predict wafer level ESD performance
Keywords :
application specific integrated circuits; buffer circuits; electrostatic discharge; integrated circuit modelling; integrated circuit reliability; ion implantation; pulse generators; surge protection; transmission line theory; ESD protection circuit; I/O circuit; fully synthesized I/O circuit; human body model test results; n-channel output buffer; p-type halo implant; thick field oxide; transmission-line pulse generator analysis; turn-on inhibition; wafer level ESD performance; Biological system modeling; Circuit testing; Electrostatic discharge; Humans; Immune system; Implants; Protection; Pulse generation; Robustness; Transmission lines;
Conference_Titel :
Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-3669-0
DOI :
10.1109/CICC.1997.606580
