Performance improvement of a thick field oxide ESD protection circuit by halo implant

Author

Gilbert, Percy V. ; Tsui, Paul G Y ; Sun, Shih-Wei ; Jamison, Stephen ; Miller, James W.

Author_Institution

Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA

fYear

1997

fDate

5-8 May 1997

Firstpage

35

Lastpage

38

Abstract

Optimization of a sub-0.5 μm ESD protection circuit using halo implant is described. A p-type halo implant significantly improves the ESD robustness of a high performance I/O circuit as noted by Human Body Model (HBM) test results. The improved ESD performance is directly attributed to the ability of the halo implanted Thick Field Oxide (TFO) device to inhibit the turn-on of the n-channel output buffer during an ESD event. Improved ESD performance is achieved without the use of additional series resistance and with no increase in device area. The results represent the first time transmission-line pulse generator (TLPG) analysis has been used on a fully synthesized I/O circuit to predict wafer level ESD performance

Keywords

application specific integrated circuits; buffer circuits; electrostatic discharge; integrated circuit modelling; integrated circuit reliability; ion implantation; pulse generators; surge protection; transmission line theory; ESD protection circuit; I/O circuit; fully synthesized I/O circuit; human body model test results; n-channel output buffer; p-type halo implant; thick field oxide; transmission-line pulse generator analysis; turn-on inhibition; wafer level ESD performance; Biological system modeling; Circuit testing; Electrostatic discharge; Humans; Immune system; Implants; Protection; Pulse generation; Robustness; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-3669-0

Type

conf

DOI

10.1109/CICC.1997.606580

Filename

606580