40V MESFETs fabricated on 32nm SOI CMOS

This article describes 40V N-channel MESFETs fabricated at a commercial 32nm SOI CMOS foundry without changing any of the process flow or including additional mask steps. The 32nm technology node is the most advanced technology node to date for MESFET fabrication and builds upon previous work completed at other process nodes. High voltage MESFETs were measured with current drives of 110mA/mm. The devices are suitable for RF development and have peak cut-off frequency, f_T, of 30.5GHz and maximum oscillation frequency, f_max, of 34.5GHz.