Title :
Optical transitions from SiO2/crystalline Si/SiO2 quantum wells
Author :
Cho, E.C. ; Reece, P. ; Green, M.A. ; Corkish, R. ; Gal, M.
Author_Institution :
Centre for Third Generation Photovoltaics, New South Wales Univ., Sydney, NSW, Australia
Abstract :
Crystalline silicon single quantum wells were fabricated by high temperature thermal oxidation of ELTRAN silicon-on-insulator (SOI) wafers. The Si layer thickness enclosed by thermal SiO2 ranges from 1.1 to 4.3 nm, measured by high resolution transmission electron microscopy (HRTEM). Si thickness dependent luminescence in SiO2/Si/SiO2 quantum wells was observed for the samples with 1.1 nm to 2.7 nm thick Si. Luminescent peak energy varies from 730 nm to 920 nm without interface-mediated luminescence.
Keywords :
elemental semiconductors; high-temperature techniques; infrared spectra; nanotechnology; oxidation; photoluminescence; semiconductor quantum wells; silicon; silicon compounds; silicon-on-insulator; transmission electron microscopy; 1.1 to 4.3 nm; 730 to 920 nm; ELTRAN silicon-on-insulator wafers; HRTEM; Si layer thickness; Si thickness dependent luminescence; SiO2-Si-SiO2; SiO2/crystalline Si/SiO2 quantum wells; crystalline silicon single quantum wells fabrication; high resolution transmission electron microscopy; high temperature thermal oxidation; interface-mediated luminescence; luminescent peak energy; optical transitions; thermal SiO2; Cleaning; Crystallization; Image resolution; Laser transitions; Lattices; Luminescence; Oxidation; Photoluminescence; Quantum well lasers; Silicon;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237244
