Modeling of radiation induced burnout in DMOS transistors

Results of time-dependent, two-dimensional numerical simulations of the prompt gamma radiation effect for double-diffused MOS transistors are presented. The effects of different process and design parameters such as p-body sheet resistance, n/sup +/ source length, and drain doping profile on the burnout failure mechanism are examined. The simulation results provide the physical insight necessary to incorporate process and structure modifications to improve the radiation tolerance of the device. An analysis provides the means to help predict the onset of radiation-induced burnout in order to evaluate the prompt gamma radiation hardness of various designs. Experimental results are used to corroborate the simulation results.<>