Recent advances in GaN power electronics

Author

Boutros, Karim ; Rongming Chu ; Hughes, Brian

Author_Institution

HRL Labs., LLC, Malibu, CA, USA

fYear

2013

fDate

22-25 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power switching applications having weight and volume constraints, while simultaneously needing a high overall efficiency. With its projected 100x performance advantage over silicon, GaN is a game changing technology for energy-efficient power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the potential applications for this technology.

Keywords

III-V semiconductors; MOSFET; elemental semiconductors; gallium compounds; power integrated circuits; silicon; wide band gap semiconductors; GaN; GaN material; GaN power electronics; Si; energy-efficient power electronics; gallium nitride power devices; game changing technology; power circuits; power switching; silicon-based MOSFET; volume constraints; weight constraints; Gallium nitride; HEMTs; Logic gates; MODFETs; Performance evaluation; Silicon; Switches; GaN; GaN-on-Si; Gallium Nitride; HFET; energy-efficient electronics; hetero-structure field-effect-transistor; power electronics; power switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2013 IEEE

Conference_Location

San Jose, CA

Type

conf

DOI

10.1109/CICC.2013.6658400

Filename

6658400