Enhancement of THz emission from semiconductor devices

Author

Dowd, A. ; Johnston, M.B. ; Whittaker, D.M. ; Davies, A.G. ; Linfield, E.H.

Author_Institution

Cavendish Laboratory, Cambridge Univ., UK

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

281

Lastpage

284

Abstract

We have studied the emission of coherent terahertz (THz) frequency electromagnetic pulses from semiconductor surfaces. Collimated beams of THz radiation are observed from surface-field emitters and the efficiency of these emitters is shown to be improved by (a) modifying the effective refractive index at the surface of the emitter and (b) reorienting the THz dipole with respect to the surface. A ∼ 20× enhancement in emitted THz power was seen in a GaAs/InAs prism emitter.

Keywords

III-V semiconductors; electromagnetic pulse; gallium arsenide; indium compounds; microwave photonics; refractive index; semiconductor devices; submillimetre wave antennas; submillimetre wave generation; submillimetre wave spectra; 20× enhancement; GaAs-InAs; GaAs/InAs prism emitter; THz dipole reorientation; THz emission enhancement; THz radiation; coherent terahertz frequency electromagnetic pulses; collimated beams; effective refractive index; emitted THz power; semiconductor devices; semiconductor surfaces; surface-field emitters; Frequency; Gratings; Optical pulse generation; Optical refraction; Optical surface waves; Optical variables control; Quantum cascade lasers; Refractive index; Semiconductor devices; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237246

Filename

1237246