Title :
A model charge transport in thermal SiO/sub 2/ implanted with Si
Author :
Kalnitsky, A. ; Boothroyd, A.R. ; Ellul, J.P.
Author_Institution :
Northern Telecom Electron., Ltd., Ottawa, Ont., Canada
Abstract :
A model of charge transport in thermal SiO/sub 2/ with Si-implant-induced traps is proposed. In this model, traps are permitted to communicate with both the conduction band and the valence band of the Si substrate and poly-Si gate by means of direct tunneling. Electron injection in the SiO/sub 2/ conduction band, electron trapping by neutral and positively charged sites, and field depopulation of negatively charged traps are allowed. Net neutral traps can charge positively by losing an electron or negatively by acquiring one by any of the mechanisms discussed. Allowed transitions occur in the energetically favorable regions of SiO/sub 2/ as defined by the self-consistent potential energy distribution. The model adequately describes current conduction in 20-35-nm-thick SiO/sub 2/ implanted with 0.4 to 2*10/sup 16/ Si ions/cm/sup 2/ at 10 to 25 keV over several decades of current.<>
Keywords :
dielectric thin films; electronic conduction in insulating thin films; ion implantation; semiconductor device models; semiconductor-insulator boundaries; silicon; silicon compounds; 10 to 25 keV; 20 to 35 nm; Si-implant-induced traps; SiO/sub 2/ conduction band; SiO/sub 2/:Si-Si; current conduction; direct tunneling; electron trapping; energetically favorable regions; field depopulation; gate dielectric; model; model charge transport; negatively charged traps; self-consistent potential energy distribution; thermal SiO/sub 2/; Dielectrics; Electron traps; Fabrication; Integral equations; Kinetic theory; Poisson equations; Potential energy; Semiconductor device modeling; Temperature dependence; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32868
