DocumentCode
2154369
Title
Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies
Author
Zöschg, Dietmar ; Wilhelm, Wilhelm ; Knapp, Herbert ; Aufinger, Klaus ; Böck, Josef ; Meister, T.F. ; Wurzer, Martin Wurzer ; Wohlmuth, Hans-Dieter Wohlmuth ; Scholtz, Arpad L.
Author_Institution
INFINEON Technologies AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany, Tel.: +49 89 234-48432, Fax.: +49 89 234-47069, E-Mail: Dietmar.Zoeschg@infineon.com; Institute of Communications and Radio-Frequency Engineering, Technical University of Vienna, GuÃ\x9f
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
4
Abstract
The noise properties of silicon and SiGe bipolar technologies at identical design rules are evaluated by theory and by experimental LNAs designed for the frequencies of 2 GHz, 6 GHz, and 10 GHz. For a fair comparison the same circuit principle is used for all six LNAs, with gain of about 20 dB or above, suitable for the applications in wireless communications.
Keywords
Circuits; Delay; Germanium silicon alloys; Low-noise amplifiers; Noise figure; Paper technology; Parasitic capacitance; Radio frequency; Silicon germanium; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338728
Filename
4139741
Link To Document