• DocumentCode
    2154393
  • Title

    A 70-GHz Bandwidth and 9-dB Gain Travelling Wave Amplifier Using 0.15-μm Gate InGaP/InGaAs HEMTs with Coplanar Transmission Line Technology

  • Author

    Sato, Masaru ; Hirose, Tatsuya ; Watanabe, Yuu

  • Author_Institution
    Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243-0197, Japan. E-mail: masaru@kahan.flab.fujitsu.co.jp
  • fYear
    2000
  • fDate
    4-6 Oct. 2000
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We developed a technique to reduce gain variations over a wide frequency range for an ultra-broadband travelling wave amplifier (TWA) that employs a cascode configuration using 0.15-μm gate InGaP/InGaAs HEMTs. Using this technique, we achieved gain variations within 1.5 dB for frequencies up to 70 GHz with a 9-dB gain. The agreement of measured S-parameters with simulated results demonstrates that the proposed technique is suitable for broadband amplifier design.
  • Keywords
    Bandwidth; Broadband amplifiers; Coplanar transmission lines; Cutoff frequency; HEMTs; Impedance; Indium gallium arsenide; MODFETs; Optical amplifiers; Power transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000. 30th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.2000.338729
  • Filename
    4139742